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Effects of dry etching damage removal on low-temperature silicon selective epitaxial growth

Authors :
Tseng, H.-C.
Chang, C.Y.
Pan, F.M.
Chen, L.P.
Source :
Journal of Applied Physics. Oct 1, 1995, Vol. 78 Issue 7, p4710, 5 p.
Publication Year :
1995

Details

ISSN :
00218979
Volume :
78
Issue :
7
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.17786836