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Effects of dry etching damage removal on low-temperature silicon selective epitaxial growth
- Source :
- Journal of Applied Physics. Oct 1, 1995, Vol. 78 Issue 7, p4710, 5 p.
- Publication Year :
- 1995
Details
- ISSN :
- 00218979
- Volume :
- 78
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.17786836