Structure of AlAs/GaAs distributed Bragg reflector grown on Si substrate by metalorganic chemical vapour deposition

Studies of AlAs/GaAs distributed Bragg reflector structure shows quasiperiodic zigzag roughness, nonuniformity of thickness and the compositional transitions. The degraded heterointerfaces lead to lower reflectivity of the AlAs/GaAs distributed Bragg reflector on the silicon substrate. The reflector was grown by metalorganic chemical vapour deposition technique. Scanning electron and transmission electron microscopy and Auger electron spectroscopy were used.