Interface structure of CdSe/ZnSe epilayers

A study of interface microstructure and strain relaxation of CdSe shows that the varying misorientations present along the interface of CdSe epilayer are associated with the proportion of different 60 degree misfit dislocations and stacking faults. The high density of the long stacking faults is due to dimorphic activity of CdSe. CdSe was atomic-epitaxy-grown on ZnSe/GaAs(001) and viewed using transmission and high resolution electron microscopy.