Interaction of iron with a grain boundary in boron-doped multicrystalline silicon

The result of the study of the interaction of iron with the grain boundary in boron-doped multicrystalline silicon shows the formation of a well-defined iron depletion layer of length 20 micro meters around the grain boundary. The electron-beam-induced-current technique is used to contaminate the sample with iron. The diffusion length of the iron related carriers shows a temperature dependence and this confirms the formation of a new recombination channel.