Epitaxial growth of ultrahigh density [Ge.sub.1-x][Sn.sub.x] quantum dots on Si(111) substrates by codeposition of Ge and Sn on ultrathin Si[O.sub.2] films

MLA

Nakamura, Yoshiaki, et al. “Epitaxial Growth of Ultrahigh Density [Ge.Sub.1-x][Sn.Sub.x] Quantum Dots on Si(111) Substrates by Codeposition of Ge and Sn on Ultrathin Si[O.Sub.2] Films.” Journal of Applied Physics, vol. 102, no. 12, Dec. 2007, p. 124302. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.174587908&authtype=sso&custid=ns315887.

APA

Nakamura, Y., Masada, A., Sung-Pyo Cho, Tanaka, N., & Ichikawa, M. (2007). Epitaxial growth of ultrahigh density [Ge.sub.1-x][Sn.sub.x] quantum dots on Si(111) substrates by codeposition of Ge and Sn on ultrathin Si[O.sub.2] films. Journal of Applied Physics, 102(12), 124302.

Chicago

Nakamura, Yoshiaki, Akiko Masada, Sung-Pyo Cho, Nobuo Tanaka, and Masakazu Ichikawa. 2007. “Epitaxial Growth of Ultrahigh Density [Ge.Sub.1-x][Sn.Sub.x] Quantum Dots on Si(111) Substrates by Codeposition of Ge and Sn on Ultrathin Si[O.Sub.2] Films.” Journal of Applied Physics 102 (12): 124302. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.174587908&authtype=sso&custid=ns315887.