A study of deep-submicron MOSFET scaling based on experiment and simulation

Authors :: Hu, Hang
Jacobs, Jarvis B.
Su, Lisa T.
Antoniadis, Dimitri A.
Source :: IEEE Transactions on Electron Devices. April, 1995, Vol. 42 Issue 4, p669, 9 p.
Publication Year :: 1995
Abstract: Device measurements and numerical simulations facilitate the study of the scaling relationship between three basic quantities of deep-submicron MOSFETS. The study reveals that the relationship can be expressed in the form of power laws. The expression provides good statistical correlation for the simulated and experimental data for electron devices.