Innovative simulations of heavy ion cross sections in 130 nm CMOS SRAM

A simulation tool to predict the heavy ion cross section is proposed. A 20% average error between experimental and simulated results is shown for a SRAM in a commercial 130 nm CMOS technology. Input parameters are obtained by device or circuit simulations and no fitting parameters or empirical calibration with previous radiation testings is needed. Index Terms--Cross section, heavy ion, passivation, PHISco, PMOS, SEU.