Theoretical study of some physical aspects of electronic transport in nMOSFETs at the 10-nm gate-length

Authors :: Fischetti, Massimo V.
O'Regan, Terrance P.
Narayanan, Sudarshan
Sachs, Catherine
Seonghoon Jin
Jiseok Kim
Yan Zhang
Source :: IEEE Transactions on Electron Devices. Sept, 2007, Vol. 54 Issue 9, p2116, 21 p.
Publication Year :: 2007
Abstract: The theoretical aspects of the physics of electronic transport in nMOSFETs at the 10-nm scale, long-range Coulomb interactions that might degrade performance and even prevent ballistic transport from occurring are discussed.

Subjects :: Metal oxide semiconductor field effect transistors -- Design and construction
Metal oxide semiconductor field effect transistors -- Electric properties
Monte Carlo method -- Usage
Electron mobility -- Analysis
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