Characteristics of new dielectric isolation wafers for high voltage power IC's by single-Si poly-Si direct bonding (SPSDB) technique

A study of the mechanical and physical characteristics of a new single-Si poly-Si direct bonding (SPSDB)-based dielectric isolated (DI) wafer helps modify the wafer size, wafer warpage and device patterning size appropriately. The SPSDB-based DI wafers with 5-inch size have a high bonding strength and constant warpage height. The bonding strength of the DI wafers bonded at 1100 degrees Celsius are similar to that of the thermal oxidizing layer interface.