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Formation and kinetics of ion-induced yttrium silicide layers
- Source :
- Journal of Applied Physics. Feb 1, 1995, Vol. 77 Issue 3, p1010, 5 p.
- Publication Year :
- 1995
-
Abstract
- The growth rate and mechanism of growth of ion-stimulated yttrium silicide layers are measured using inert ions. The growth rates are determined with respect to fluence and nuclear energy deposition at the Y Si interface. The yttrium silicide layers are formed after ion-induced phase transformation in amorphous-Si Y bilayers.
- Subjects :
- Yttrium -- Research
Layer structure (Solids) -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 77
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.16989486