Electrical properties of Cr-doped BiFe[O.sub.3] thin films fabricated on the p-type Si (100) substrate by chemical solution deposition

Authors :: Seung U. Lee
Sang Su Kim
Hyeun Kyung Jo
Mun Heum Park
Jin Won Kim
Bhalla, Amar S.
Source :: Journal of Applied Physics. August 15, 2007, Vol. 102 Issue 4, 044107-1-044107-5
Publication Year :: 2007
Abstract: The electrical properties of BFCr thin films fabricated on the p-type Si (100) substrates by the chemical solution deposition (CSD) method are investigated. The current-voltage curves are used for showing that the current conduction mechanism of BFCr thin films on the p-type Si (001) capacitor is dominated by the ferroelectric Schottky emission.

Subjects :: Ferroelectric devices -- Electric properties
Dielectric films -- Electric properties
Thin films -- Electric properties
Barium compounds -- Electric properties
Diodes, Schottky-barrier -- Usage
Physics

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