High critical current density in SiC doped in-situ [MgB.sub.2] wires prepared by continuous tube forming and filling technique

The study describes the synthesis of SiC doped in-situ [MgB.sub.2] wires with extremely high critical current density, which are normally prepared by the continuous tube forming and filling (CTFF) technique. The increase in the filling factor is found to cause an increase in the critical current density, as well.