Back to Search Start Over

Double-gate tunnel FET with high-k gate dielectric

Authors :
Boucart, Kathy
Ionescu, Adrian Mihai
Source :
IEEE Transactions on Electron Devices. July, 2007, Vol. 54 Issue 7, p1725, 9 p.
Publication Year :
2007

Abstract

The article proposes a double-gate tunnel field transistor (DG Tunnel FET) device, which use a high-k gate dielectric as compared to single-gate devices.

Subjects

Subjects :
Field-effect transistors -- Design and construction
Gates (Electronics) -- Design and construction
Circuit design -- Analysis
Circuit designer
Integrated circuit design
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
54
Issue :
7
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.168187820

Tools

Authors Abstract Subjects Details