Temperature effect on heavy-ion induced parasitic current on SRAM by device simulation: effect on SEU sensitivity

A temperature dependence analysis of single event transient currents induced by heavy-ions using TCAD simulation is performed in the 218 to 418 K range on a 0.18 [micro]m SRAM cell manufactured by ATMEL. The Single Event Upset (SEU) phenomena depends on both the heavy-ions-induced transient current and the technology. Temperature is shown to have a significant impact on the trends of heavy-ions-induced current. The SEU sensitivity is then expected to exhibit a large temperature dependence. However, a small influence on the SEU sensitivity is reported in this work on the studied technology. Index Terms--Heavy-ion, single event transient, single event upset sensitivity, SRAM, technology computer-aided design (TCAD) simulation, temperature dependence.