3D quantum numerical simulation of single-event transients in multiple-gate nanowire MOSFETs

The impact of quantum confinement effects on the transient response of 32 nm Multiple-Gate nanowire MOSFETs to heavy ion irradiation is investigated using 3D quantum numerical simulation. The drain current transient induced by an ion strike and the bipolar amplification of Double-Gate, Triple-Gate, Omega-Gate and Gate-All-Around architectures is simulated for the 2007, 2009 and 2011 ITRS Low Power technology nodes. The consequences of quantum-mechanical confinement on single-event transient immunity when devices are scaled down to 20 nm gate length and 5 nm thick silicon channel are then analyzed. Index Terms--Double-Gate (DG), Gate-All-Around (GAA), Multiple-Gate nanowire MOSFET, Omega-Gate ([OMEGA]-Gate), quantum-mechanical effects, 3D quantum simulation, Triple-Gate (Tri-gate).