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Scalability of stress induced by contact-etch-stop layers: A simulation study

Authors :
Eneman, Geert
Verheyen, Peter
De Keersgieter, An
Jurczak, Malgorzata
De Meyer, Kristin
Source :
IEEE Transactions on Electron Devices. June, 2007, Vol. 54 Issue 6, p1446, 8 p.
Publication Year :
2007

Abstract

A study on the effectiveness of strained contact-etches-stop-layer (CESL) technologies in aggressively scaled dense structures is presented. Results show that the two main channel stress components introduced by CESL, which are the vertical and parallel stresses, have a different sensitivity toward layout variations.

Subjects

Subjects :
Simulation methods -- Analysis
Metal oxide semiconductor field effect transistors -- Design and construction
Complementary metal oxide semiconductors -- Electric properties
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
54
Issue :
6
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.167726915

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