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Nanocrystal memory cell integration in a stand-alone 16-Mb NOR flash device

Authors :
Gerardi, Cosimo
Ancarani, Valentina
Portoghese, Rosario
Giuffrida, Stella
Bileci, Marco
Bimbo, Gabriella
Brafa, Orazio
Mello, Domenico
Ammendola, Giuseppe
Tripiciano, Elena
Puglisi, Rosaria
Lombardo, Salvatore A.
Source :
IEEE Transactions on Electron Devices. June, 2007, Vol. 54 Issue 6, p1376, 8 p.
Publication Year :
2007

Abstract

The full process integration of nano-crystal (NC) memory cells in a stand-alone 16-Mb NOR Flash device is examined. The findings suggest that NC sizes, dispersion and the interpoly dielectric structure are responsible for affecting the electrical performances related to reliability issues.

Details

Language :
English
ISSN :
00189383
Volume :
54
Issue :
6
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.167722009