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Nanocrystal memory cell integration in a stand-alone 16-Mb NOR flash device
- Source :
- IEEE Transactions on Electron Devices. June, 2007, Vol. 54 Issue 6, p1376, 8 p.
- Publication Year :
- 2007
-
Abstract
- The full process integration of nano-crystal (NC) memory cells in a stand-alone 16-Mb NOR Flash device is examined. The findings suggest that NC sizes, dispersion and the interpoly dielectric structure are responsible for affecting the electrical performances related to reliability issues.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 54
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.167722009