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Modeling and characterization of hydrogen-induced charge loss in nitride-trapping memory
- Source :
- IEEE Transactions on Electron Devices. June, 2007, Vol. 54 Issue 6, p1360, 6 p.
- Publication Year :
- 2007
-
Abstract
- Hydrogen diffusion in nitride-based Flash memory is examined. The results suggest that the increase in number of programmed electrons leads to a decline in the hydrogen diffusion length.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 54
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.167722006