Epitaxial growth of Sb GaSb structures: an example of V III-V heteroepitaxy

GaSb Sb structures grown heteroepitaxially by the molecular-beam epitaxy method are examples of the heteroepitaxy between the III-V compounds and group-V elements. Single-crystal Sb undergoes rapid nucleation on (III)A GaSb while GaSb grows well on (III) Sb and displays (III)A orientation. An epitaxial model helps simulate the growth characteristics of the Sb GaSb structures.