Metal-insulator-semiconductor capacitors on cleaved GaAs(110)

Authors :: Huang, L.J.
Lau, W.M.
Ingrey, S.
Landheer, D.
Noel, J.-P.
Source :: Journal of Applied Physics. Dec 15, 1994, Vol. 76 Issue 12, p8192, 3 p.
Publication Year :: 1994
Abstract: X-ray photoemission spectroscopy and capacitance-voltage measurements help analyze the properties and the chemical structure of the interfaces of metal-insulator-semiconductor capacitors on cleaved n-GaAs (110) facets. Passivation processes do not enhance the C-V characteristics while silicon interface control layer method enhances the C-V properties. The capacitors have a minimum interface state density value of 10 to the power of 12 e/V per sq cm.