Dependence of the interface sharpness of a Ge single quantum well on molecular-beam-epitaxial growth conditions

Experimental determination of the effect of molecular-beam-epitaxy growth and antimony-mediated growth on the properties of germanium single quantum wells (QWs) on (001) silicon matrix shows that QWs grown using molecular-beam-epitaxy display segregation-induced alloying while antimony-mediated growth conditions confer the best interface sharpness to the QWs at 450 degrees Celsius. Annealing at high temperatures following growth induces Ge and Si interdiffusion that enhance alloying. Antimony-mediated growth conditions enable the surfactant to promote the bulk properties of germanium at high temperatures.