Imaging InGaAsP quantum-well lasers using near-field scanning optical microscopy

Characterization of InGaAsP lasers by a near-field scanning optical microscope reveals irregularities and defects in the waveguide. The local and overheating of the laser assessed through shear force and near-field images enable better understanding of inhomogeneities in growth. This technique helps overcome carrier leakage and decrease in threshold current and does not require any particular kind of surrounding. All these facts make this method a favored one.