Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of Hf[O.sub.2] gate stack structures

A combinatorial method is used to fabricate work function (WF) tuned Pt-W alloy films, which are used as metal electrodes for Hf[O.sub.2]/Si[O.sub.2]/Si capacitors. The results have shown that the control of bonding states at the metal/Hf[O.sub.2] interfaces on an atomic scale is necessary for the realization of a combination of metal and high-[kappa] dielectric films in metal-oxide-semiconductor devices.