Ultraviolet electroluminescence from ZnO/ p-Si heterojunctions

The properties of nominally undoped ZnO films, which are deposited by reactive sputtering on the lightly boron-doped([p.sup.-]) and heavily boron-doped([p.sup.+]) silicon substrates, are studied. The analysis reveals that the ZnO/[p.sup.+]-Si hetereojunctions are electroluminescent to a certain extent in the visible region, whereas the ZnO/[p.sup.-]-Si heterojunctions does not exhibit this property.