A comparative study on nanotextured high density Mg-doped and undoped GaN

The process of photoelectrochemical etching is employed to comparatively study the properties of nanotextured high density Mg-doped and undoped GaN in the temperature dependent photoluminescence (PL). The analysis reveals that an increase in the potential fluctuation created by the nanotexurization process increases the carrier localization in the substances, which explains the observed asymmetric S-shaped behavior in the GaN compounds.