Electrical and optical response of a very high frequency AlGaAs/GaAs heterojunction bipolar transistor

MLA

Martin, M. Z., et al. “Electrical and Optical Response of a Very High Frequency AlGaAs/GaAs Heterojunction Bipolar Transistor.” Journal of Applied Physics, vol. 76, no. 6, Sept. 1994, p. 3847. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.16427786&authtype=sso&custid=ns315887.

APA

Martin, M. Z., Oshita, F. K., Matloubian, M., Fetterman, H. R., Ho, W. J., Wang, N. L., Chang, F., & Cheung, D. (1994). Electrical and optical response of a very high frequency AlGaAs/GaAs heterojunction bipolar transistor. Journal of Applied Physics, 76(6), 3847.

Chicago

Martin, M.Z., F.K. Oshita, M. Matloubian, H.R. Fetterman, W.J. Ho, N.L. Wang, F. Chang, and D. Cheung. 1994. “Electrical and Optical Response of a Very High Frequency AlGaAs/GaAs Heterojunction Bipolar Transistor.” Journal of Applied Physics 76 (6): 3847. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.16427786&authtype=sso&custid=ns315887.