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Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation
- Source :
- Journal of Applied Physics. Feb 1, 2007, Vol. 101 Issue 3, p033122-1, 5 p.
- Publication Year :
- 2007
-
Abstract
- The improvement of GaInNAs/GaAs p-i-n photodetector responsivity following the incorporation of antimony into the quaternary material and the measurements from deep level transient spectroscopy (DLTS) to support the effects leading to such improvement is reported. The results have shown that the incorporation of Sb into GaInNAs has effectively improved the performance of the p-i-n photodetector device.
- Subjects :
- Antimony -- Chemical properties
Antimony -- Spectra
Antimony -- Optical properties
Indium -- Chemical properties
Indium -- Spectra
Indium -- Optical properties
Gallium -- Chemical properties
Gallium -- Spectra
Gallium -- Optical properties
Arsenic -- Chemical properties
Arsenic -- Spectra
Arsenic -- Optical properties
Physics
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 101
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.164088581