Ion-assisted pulsed laser deposition of cubic boron nitride films

Spectroscopic and diffraction studies confirm that ion-assisted pulsed laser deposition generates sp3-bonded cubic boron nitride (c-BN) films. Irradiation of the hexagonal boron nitride layer present on Si(100) surfaces with ions from a broad beam ion source causes the deposition of c-BN at a temperature range of 50 to 800 degrees C. The c-BN amount on Si surfaces depends on growth time and deposition temperature. The compressive stress under which c-BN grows decreases with growth time.