Plasma assisted two stage selenization process for the preparation of selenide semiconductor thin films using elemental selenium vapor

Elemental selenium vapor is used in the plasma-assisted two-stage selenization process that facilitates formation of copper selenide semiconductor thin films. The presence of the Se(x) species in the gas phase is unaffected by the kinetics of its interaction with the precursor. Highly crystalline CuSe films are produced within 2 to 5 minutes at low temperatures. The CuSe growth phase is hexagonal in accordance with the copper selenium vapor reaction thermodynamics.