Study of internal absorption in Zn(Cd)Se/ZnMgSSe semiconductor lasers

Authors :: Kondo, K.
Ukita, M.
Yoshida, H.
Kishita, Y.
Okuyama, H.
Ito, S.
Ohata, T.
Nakano, K.
Ishibashi, A.
Source :: Journal of Applied Physics. Sept 1, 1994, Vol. 76 Issue 5, p2621, 6 p.
Publication Year :: 1994
Abstract: Experimental and optical field analyses of the internal absorption of Zn(Cd)Se/ZnMgSSe semiconductor lasers revealed that the free carrier absorption of 4 per cm of the lasers is less than that of GaAs/AlGaAs semiconductor lasers. The L-I characteristics depend on cavity length of the double heterostructure (DH) lasers that have an absorption coefficient of 4.2 per cm. Differences in absorption coefficient of DH and separate confinement heterostructure (SCH) lasers are due to the GaAs substrate absorption that is 16.53 per cm for SCH and zero for DH lasers.