Precipitation of 3d transition-metal silicides in Czochralski silicon crystals

Transmission electron microscopic studies reveal the precipitation of metal silicides in as-grown Czochralski silicon crystals with 3d transition metals as contaminants. Crystals grown under slow cooling conditions exhibit preferential copper silicide precipitation. Supersaturation of silicon interstitials leads to coprecipitation of titanium and silicon interstitials. Silicon lattices can have the incorporated 3d transition-metals as isolated interstitial impurities or precipitate the metal atoms at the crystal lattice defects through silicide formation.