On positive charge formed under negative bias temperature stress

Experiments are conducted to examine the positive charge formed in silicon oxynitride (SiON) during negative bias temperature stress (NBTS). It is observed that three varying types of positive charges can be induced by NBTS, namely, as-grown hole trapping, antineutralization positive charge (ANPC), and cyclic positive charge and that the relative importance of positive charge formation depends on measurement interruption time.