Effect of spatially dependent screening on the binding energy of shallow impurities in spherical GaAs-(Ga,Al)As quantum dots

The binding energies of shallow impurities in spherical GaAs-(Ga,Al)As quantum dots are calculated by a variational procedure. This procedure is based on the effect of spatially dependent screening and is within the range necessary for effective-mass approximation. Binding energies are increased by the gamma-dependent dielectric response. When dimensionality is reduced, the spatially-dependent screening increases quantum confinement.