A Monte Carlo study of hot electron injection and interface state generation model for silicon metal-oxide-semiconductor field-effect transistors

A Monte Carlo approach is coupled with an interface state generation model to calculate the amount of interface state generation and its lateral distribution in Si metal-oxide-semiconductor field-effect transistors. Interface state generation on different Monte Carlo parameters are sensitive to hot electron energy distribution in the channel. The strong dependence of high-energy tail in the electron distribution function prevents the accurate prediction and modeling of hot electron induced phenomena.