Ohmic contacts to n-GaAs with a Pt/Ge/Au contacting layer and a Ta-Si-N barrier: electrical and metallurgical characteristics

A study of Pt/Ge/Au contacting layer and a Ta-Si-N barrier which served as ohmic contacts to n-GaAs revealed the significance of the barrier layer to the contact's thermal stability. The Ta-Si-N barrier layer prevented Au inflow from the metallization layer from disrupting the GaAs-trilayer system's chemical equilibria. Contact degradation at 450 degrees centigrade occurred when the barrier layer was absent.