Thermal degradation under pulse operation in low-temperature p-channel poly-Si thin-film transistors

The heat generation of a low-temperature polycrystalline thin-film transistor in pulse operation is analyzed and a technique is proposed for accurately measuring its thermal temperature in high-frequency operation. The degradation in pulse operation is investigated by pulse signal input into the p-channel low-temperature p-Si thin-transistor (TFT) and the relationship between the thermal temperature and the degradation in the pulse operation is discussed.