Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer

Study makes use of the spatially resolved cathodoluminescence (CL) spectroscopy to analyze the spatial distribution of deep level defects and luminescence in crack-free AlGaN layers. Results show that the distribution of the intensity of the deep level luminescence (DLAL) band show a domainlike feature, which is normally supposed to be caused due to the strain field within the domains.