Rad-hard silicon diode response for photon spectrometry

In this Paper we describe the performance of a radhard diode (AI/p+/n/n+/Al), developed in the framework of research and development programs for the future CMS experiment at LHC, for detection and spectrometry of X-and ')'-rays envisaging its use in characterization of porous structures by X-ray tomography. The diode's response was studied using [sup.57]Co, [sup.133]Ba, and [.sup.241]Am radioactive sources at room temperature. A reasonable good energy resolution was obtained in the energy range between 30 and 360 keV (FWHM = 5.2 keV and 5.7 keV, respectively). In the same energy range, measurements of full-energy peak efficiencies were carried out and compared with the theoretical values. For 59.5 keV photons the angular dependence of the efficiency was also measured. The results have demonstrated that this diode is appropriate for direct detection of low energy electromagnetic radiation. Index Terms--Microtomography, rad-hard silicon detectors, X-ray spectrometry.