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Ion implanted Si:P double dot with gate tunable interdot coupling

Authors :
V.C. Chan
Buehler, T.M.
Ferguson, A.J.
McCamey, D.R.
Reilly, D.J.
Dzurak, A.S.
Clark, R.G.
Yang, C.
Jamieson, D.N.
Source :
Journal of Applied Physics. Nov 15, 2006, Vol. 100 Issue 10, 106104-1-106104-3
Publication Year :
2006

Abstract

The milli-Kevin charge sensing measurements of a silicon double-dot system, which is fabricated by phosphorous ion implantation, is described. The implantation of a Si:P double dot system with gate tunable interdot coupling has enabled relatively straightforward incorporation into more complex circuits.

Subjects

Subjects :
High-electron-mobility transistors -- Electric properties
High-electron-mobility transistors -- Optical properties
High-electron-mobility transistors -- Thermal properties
Ion implantation -- Analysis
Silicon -- Electric properties
Silicon -- Optical properties
Silicon -- Thermal properties
Annealing -- Analysis
Physics

Details

Language :
English
ISSN :
00218979
Volume :
100
Issue :
10
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.158503216

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