Substrate engineering concepts to mitigate charge collection in deep trench isolation technologies

Delayed charge collection from ionizing events outside the deep trench can increase the SEU cross section in deep trench isolation technologies. Microbeam test data and device simulations demonstrate how this adverse effect can be mitigated through substrate engineering techniques. The addition of a heavily doped p-type charge-blocking buried layer in the substrate can reduce the delayed charge collection from events that occur outside the deep trench isolation by almost an order of magnitude, implying an approximately comparable reduction in the SEU cross section. Index Terms--Deep trench isolation, Ion Beam Induced Charge Collection (IBICC), silicon germanium, Single Event Upset (SEU), substrate engineering.