Analysis of 45-nm multi-gate transistors behavior under heavy ion irradiation by 3-D device simulation

The sensitivity to heavy ions of three 45-nm multi-gate transistors is evaluated by 3-D simulation. An in depth investigation of main internal parameters is performed to study the electrical response of the different device architectures under irradiation. The obtained results are in agreement with the electrical behavior trends of these devices. Index Terms--Bipolar gain, double-gate transistor, FinFET transistor, GAA transistor, MOSFET.