Electrical trimming of ion-beam-sputtered polysilicon resistors by high current pulses

High current pulses in the ion-beam-sputtered polysilicon resistors help the electrical trimming process in the resistors. The pulses induce Joules heating effects, resulting in the passivation of the interfacial grain boundaries at low and high currents. The trimming process does not affect the components of the monolithic chip and is simulated using small-signal resistivity and large-bias conduction models.