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The performances of (InAs)1/(GaAS)2 short-period superlattice strained single-quantum-well laser on GaAs substrate

Authors :
Kurakake, Hirohide
Uchida, Toru
Kubota, Shinichi
Soda, Haruhisa
Yamazaki, Susumu
Source :
IEEE Journal of Quantum Electronics. April, 1994, Vol. 30 Issue 4, p909, 4 p.
Publication Year :
1994

Abstract

The short-period superlattice (SPS) strained laser, which has a 1.07 micrometer lasing wavelength and a 130 A per centimeter squared threshold current density, is ideal to develop long wavelength lasers. The SPS laser, which does not alter the characteristic temperature of the long wavelength laser, possesses a SPS active layer, comprising InAs and GaAs.

Details

ISSN :
00189197
Volume :
30
Issue :
4
Database :
Gale General OneFile
Journal :
IEEE Journal of Quantum Electronics
Publication Type :
Academic Journal
Accession number :
edsgcl.15650429