Intrinsic data retention in nanoscaled phase-change memories-part II: Statistical analysis and prediction of failure time

A detailed analysis of data retention statistics in phase-change memories is presented and the experimental results are discussed with the aid of a Monte Carlo model for crystallization that allows a statistical approach. The physically based crystallization-percolation model can account for temperature dependence of data loss and its statistical spread, and in particular, this dependence is given by an increase of the crystallite radius, consistently with nucleation and growth theory.