Electrical characterization of ZnSe epitaxial layer reactive-ion-etched by a gas mixture of ethane and hydrogen

Reactive ion etching (RIE) of the sheet resistances of ZnSe epitaxial layers using methane and hydrogen gas mixture incorporates a high resistivity region in the sheet resistances. The calculated, electrically active thickness of p- and n-ZnSe layers are smaller than RIE-treated ZnSe epitaxial layers. Current injection and heat treatment effects on the p- and n-high resistivity regions are different.