Nitrogen-doped ZnSe with selenium-rich growth by low-pressure organometallic chemical vapor deposition

Low pressure organometallic chemical vapor deposition (CVD) under selenium-rich growth conditions yields high quality nitrogen-doped p-type ZnSe epilayer on (100) GaAs substrate. Hall measurements performed on these epilayers provide the free carrier concentration and resistivity of ZnSe. ZnSe assimilates nitrogen as a shallow level in a molar ratio combination.