Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

Authors :: Yerci, S.
Serincan, U.
Dogan, I.
Tokay, S.
Turan, R.
Genisel, M.
Aydinli, A.
Source :: Journal of Applied Physics. Oct 1, 2006, Vol. 100 Issue 7, p074301-1, 5 p.
Publication Year :: 2006
Abstract: The formation of Si nanocrystals in Al2O3 matrix by ion implantation and subsequent annealing is studied with Raman spectroscopy, x-ray diffraction (XRD), and photoluminescence (PL) spectroscopy. The nanocrystals sizes are obtained from the width of Si (111) XRD pattern by applying Scherrer's formula.

Subjects :: Photoluminescence -- Analysis
Sapphires -- Thermal properties
Sapphires -- Structure
Raman spectroscopy -- Usage
Physics

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