Carbon nanotube field-effect transistors for high-performance digital circuits-transient analysis, parasitics, and scalability

Different carbon-nanotube-based field-effect transistors (CNFETs) including Schottky-barrier (SB) CNFETs, MOS CNFETs, and state-of-the-art Si MOSFETs systematically from a circuit/system design perspective are compared and studied. Results reveal that CNFET design's performance is limited by the gate overlap capacitance and the quality of nanocontacts to these promising transistors.