Magnetotransport study on the defect levels of delta-doped In0.22Ga0.78AQs/GaAs quantum wells

Authors :: Ikai Lo
Lian, J.R
Wang H.Y.
Hsu, W.C.
Gau M.H.
Li, Y.J.
Tsai J.K.
Jih-Chen Chiang
Source :: Journal of Applied Physics. Sept 15, 2006, Vol. 100 Issue 6, p063712-1, 5 p.
Publication Year :: 2006
Abstract: The electronic properties of delta-doped In0.22Ga0.78As/GaAs quantum wells (QWs) are studied by van der Pauw Hall measurements and Shubnikov-de Haas measurements. From the temperature-dependent van der Pauw Hall measurements, two kinds of donors are observed, which have binding energies of 104 (plusmn) 7 and 9.6 (plusmn) 0.1 MeV.

Subjects :: Hall effect -- Analysis
Gallium arsenide -- Magnetic properties
Gallium arsenide -- Electric properties
Binding energy -- Analysis
Physics

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