The rectifying property and magnetoresistance of La0.67Ca0.33MnO3/SiO2/Si heterojunction

Authors :: P.L. Lang
Y.G. Zhao
C.M. Xiong
P. Wang
J. Li
D.N. Zheng
Source :: Journal of Applied Physics. Sept 1, 2006, Vol. 100 Issue 5, p053909-1, 5 p.
Publication Year :: 2006
Abstract: A heterojunction is fabricated by depositing La0.67Ca0.33MnO3 film on electron doped silicon wafer with a buffer layer of natural SiO2. The current-voltage measurement shows that it is a diode with a good rectifying property in a wide temperature range.

Subjects :: Magnetoresistance -- Analysis
Lanthanum -- Magnetic properties
Lanthanum -- Electric properties
Dielectric films -- Magnetic properties
Dielectric films -- Electric properties
Thin films -- Magnetic properties
Thin films -- Electric properties
Physics

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